Single-Side Polished (SSP) Silicon Wafers

Ultra- Flat Single-Side Polished (SSP) Silicon Wafers in Stock:
 

  • Option A:
    Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
     
  • Option B:
    Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm​
     
  • Option C:
    Size: Two Inch 2'' (50.8 mm), Thickness: 180 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
     
  • Option D:
    Size: Three Inch 3'' (76.2 mm), Thickness: 400 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
     
  • ​Option E:
    Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
     
  • Option F:
    Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: Undoped/Intrinsic, Resistivity: >10000 Ω·cm​
     
  • Option G:
    Size: Six Inch 6'' (150.0 mm), Thickness: 650 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
     
  • Option H:
    Size: Six Inch 6'' (150.0 mm), Thickness: 500 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
     
  • Option I: 
    Size: Four Inch 4'' (100.0 mm), Thickness: 1000 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​


Technical Processing Data:
 

  • Orientation: <100>+/- 0.5°;
  • TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
  • Roughness < 0.5 nm;


Volume and Custom Orders Available Upon Request.
Please send your questions or concerns to info@alphananotechne.com
 

Single-Side Polished (SSP) Silicon Wafers

20,00C$Prix