Ultra- Flat Single-Side Polished (SSP) Silicon Wafers in Stock:
Option A: Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option B: Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Option C: Size: Two Inch 2'' (50.8 mm), Thickness: 180 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option D: Size: Three Inch 3'' (76.2 mm), Thickness: 400 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option E: Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option F: Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: Undoped/Intrinsic, Resistivity: >10000 Ω·cm
Option G: Size: Six Inch 6'' (150.0 mm), Thickness: 650 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option H: Size: Six Inch 6'' (150.0 mm), Thickness: 500 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Option I: Size: Four Inch 4'' (100.0 mm), Thickness: 1000 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Technical Processing Data:
Orientation: <100>+/- 0.5°;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
Roughness < 0.5 nm;
Volume and Custom Orders Available Upon Request. Please send your questions or concerns to info@alphananotechne.com.