Ultra- Flat Single-Side Polished (SSP) Silicon Wafers in Stock:
 
	
Option A:
	Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
	 
	
Option B:
	Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm​
	 
	
Option C:
	Size: Two Inch 2'' (50.8 mm), Thickness: 180 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
	 
	
Option D:
	Size: Three Inch 3'' (76.2 mm), Thickness: 400 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
	 
	
​Option E:
	Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
	 
	
Option F:
	Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>, Type/Dopant: Undoped/Intrinsic, Resistivity: >10000 Ω·cm​
	 
	
Option G:
	Size: Six Inch 6'' (150.0 mm), Thickness: 650 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​
	 
	
Option H:
	Size: Six Inch 6'' (150.0 mm), Thickness: 500 um, Orientation: <100>, Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
	 
	
Option I: 
	Size: Four Inch 4'' (100.0 mm), Thickness: 1000 um, Orientation: <100>, Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm​

Technical Processing Data:
 
	
Orientation: <100>+/- 0.5°;
	
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
	
Roughness < 0.5 nm;

Volume and Custom Orders Available Upon Request.
Please send your questions or concerns to info@alphananotechne.com.