Ultra- Flat Double-Side Polished (DSP) Silicon Wafers in Stock:
Option A: Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Option B: Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option C: Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: N/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Option D: Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Option E: Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Option F: Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Option G: Size: Six Inch 6'' (150.0 mm); Thickness: 650 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Technical Processing Data:
Orientation: <100>+/- 0.5°;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
Roughness < 0.5 nm;
Volume and Custom Orders Available Upon Request.